Tonghui Gas
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Product Name: Germane / Germane
Molecular formula: GeH₄
Purity: ≥99.999%
Product Description: A highly toxic, self-igniting gaseous silicon-hydride compound. As a key precursor for depositing germanium/germanium-silicon thin films in semiconductor CVD processes, it is widely used in solar cells and HBT devices. In solar cells, it is employed via MOCVD to fabricate amorphous silicon-germanium films doped with germanium, enabling precise adjustment of the bandgap to enhance light absorption and conversion efficiency. In HBTs, it serves as a precursor for SiGe films, facilitating the formation of heterojunction structures that significantly improve device speed, frequency response, and gain—achieving performance comparable to GaAs-based devices. Moreover, its high-purity characteristics ensure superior film quality, meeting the stringent requirements of high-efficiency electronic devices.
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